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Home Azerbaijan Technologies Creation of gamma -Detectors on CuGaSe2- Based Sensitive Materials

Creation of γ -Detectors on CuGaSe2- Based Sensitive Materials

Description

CuGaSe2 semiconductive compound have been grown by gas transport reaction method. Crystalline iodine is used as a transporter. Obtained single crystals are p-type conductivity, resistivity is ρ=102÷103 Ohm*cm at 300 K..

Obtained single crystals take the form of trihedral prisms with the most developed mirror plane (1 2). To carry the experiments single crystals have been ground by the dusts N30, N10, N7, then glazed with diamond pastas. To refine the surface, the samples have been dipped in ethanol. Then the contacts of In-Ga eutectic were plotted on samples. Distance between the contacts is 1мм. Dependence of resistivity with γ-radiation doze have been also investigated. Samples have been radiated by 60Co isotopes in MPX-Y-25.

Innovative Aspect and Main Advantages

Preliminary investigations show that the working range of CuGaSe2 is 35-102 R/s. Specific resistance has been changed by four orders in this range (economically sound).

Areas of Application

γ -detectors for industrial spectroscopy.

Stage of Development

Creation of γ–detectors with small threshold sensitivity: development stage, laboratory tested.

Contact Details

Institute of Physics
Contact person: Kerimova Tahira Gazi kizi
Address: 33, H. Javid Avenue, AZ1143, Baku, Azerbaijan
Tel/Fax: (994 12) 432 4336
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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