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Home Azerbaijan Technologies Creation of Thermostable Tenzoresistors on the Base of GaSb-FeGa1.3, and GaSb-CiGa1.3 Eutectic Composites

Creation of Thermostable Tenzoresistors on the Base of GaSb-FeGa1.3, and GaSb-CiGa1.3 Eutectic Composites

Description

Semiconductor GaSb was made by alloying and refining it by the method of horizontal recrystallization. Additionally, GaSb-FeGa1.3 and GaSb-CоGa1.3 eutectic alloys were prepared by alloying of GaSb with Fe and Co, respectively, using the vertical Bridgman method. To avoid ampoule vibration that may disturb the solid-melt interface, the prepared sample was kept motionless with the movement of the freezing interface accomplished by lifting the furnace. The solidified interfaces were planar and oriented perpendicular to the transport direction on all ingot sections. The solidification rate was set to about 1mm/min. Employing this technique, the structure with needle-shaped metallic FeGa1.3 and CоGa1.3 phase parallel oriented in a specific direction and uniformly distributed within the GaSb matrix was obtained. The oriented needles were found to be about 1 μm and 0.5 μm in diameter, 20-150 μm and 10-20 μm in length and with ~3,3х104mm-2 and 20х104mm-2 density for inclusions FeGa1.3 and CоGa1.3, respectively. A Philips TM FEG scanning electron microscope (SEM) was employed to characterize the microstructure of the alloys. An energy dispersive X-ray spectroscopy (EDX) model EDAXTM was used to obtain quantitative information about the elemental composition in the matrix, the metal inclusions and the interphase zone of the samples.

From the grown crystals tenzoresistor elements with the sizes of 7 x 0,08 x 0,2 mm3 were prepared. Some characteristics of these composites may be adjustable with change in the size and density of the metallic inclusions that may be controlled during alloy preparation. These are important for their use as sensing elements in optical polarizers, detectors of infrared radiation, tenzoresistors and so forth.

Innovative Aspect and Main Advantages

Preliminary studies has been showed that the tensorezistors with linear, thermostable and unhysteresis characteristics on the base these eutectic composites were obtained; the temperature coefficient of strain sensitivity factor for GaSb-CoGa1.3 tenzoresistors was an order less in comparison with the GaSb-FeGa1.3 tenzoresistors.

Areas of Application

Measurements of deformation and mechanical stress of details and constructions in engineering, oil and aircraft industries.


Fig. 1 Microphotography of GaSb-FeGa1.3 and GaSb-CoGa1.3 eutectic
composites along the longitudinal direction of the specimens
(200 times optical magnifications).

Stage of Development

Production of tenzoresistors and creation of pressure sensors - pilot propotypes are available.

Contact Details

Institute of Physics
Contact person: Almaz Ahmediyya Khalilova
Address: 33, H. Javid Avenue, AZ1143, Baku, Azerbaijan
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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