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Home Azerbaijan Technologies Development of New Elements of Optoelectronics on the Basis of Layered Semiconductors

Development of New Elements of Optoelectronics on the Basis of Layered Semiconductors

Description

There are developed laboratory technologies of manufacturing of the barrier structures which are suitable for use in the devices of nonlinear optics and photo electronics. In particular, the development of the electric-field controlled modulator on the basis of Cu-GaSe-Al structure for modulation of reflected of the He-Ne laser radiation as well as the modulator on the basis of Cu-GaSe-ITO for modulation of transmitted light of laser radiation have been realized. Operation of such modulators is based on shifting of edge of the optical absorption due to only Frantz-Keldysh effect at minimization of the contribution due to Joule heating. Also the development of a high-speed attenuator on the basis of InSe of laser radiation on a wave-length 1.06 microns (YAG:Nd+3 the laser) operating on joint contribution of the Frantz-Keldysh effect and the Joule heating on shift of edge of the optical absorption is carried out. It is shown that the sharp raise of the photo current is observed at reverse bias in Cu-GaSe-ITO structure in short-wave range of spectrum, which on five orders exceed value of photo current at zero bias due to cumulative ionization of charge carriers in the range of spatial charge. The raised photo sensitivity of such structure extending in ultraviolet range gives occasion to making of effective detector UF of radiation. It is shown also that controlling by the technological process of growth of layered crystals GaSe it is possible to use their disordering of the layers grouped similarly to a prism for manufacturing the positional deflectors of radiation.

Innovative Aspect and Main Advantages

The practical absence of the broken bonds and smooth surface obtained by easy splitting of layers makes maximally simplify of producing technology of creation of the surface barrier and MIS-structures on the basis of InSe, GaSe layered semiconductors. Use of layered materials at creation of photo detectors of visible and ultra-violet ranges of spectrum allows reaching the certain advantage in comparison with silicon photo detectors on parameters of the photo sensitivity, the thermo-stability and the radiating resistance.

Areas of Application

Elements of nonlinear optic, photodetectors, modulators, deflectors, attenuators of electromagnetic radiation of wide range of spectra.


Fig. 1 The scheme of the modulator of laser radiation on the basis
of structure Cu-GaSe-Al, constructed on a principle of modulation
of the beam reflected from structure.


Fig. 2 The scheme of the modulator of laser radiation on the basis
of structure Cu-GaSe-ITO, constructed on a principle of modulation
of the beam transmitted through structure.

Stage of Development

Laboratory tested technology.

Contact Details

Institute of Physics
Contact person: Ismaylov Namik Jamil oglu
Address: 33, H. Javid Avenue, AZ1143, Baku, Azerbaijan
Tel./Fax: (994 12) 432 4336
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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