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Home Azerbaijan Technologies Development of New Heterostructures on the Basis of Wideband Polymer and Monocrystalline Silicon

Development of New Heterostructures on the Basis of Wideband Polymer and Monocrystalline Silicon

Description

The aim of this work is the creation of new heterostructures consisting of silicon and thin wideband polymer films, and also experimental study of mechanisms of conduction and transport of carriers in them.

Scientific interest in the study of thin films based on different polymers, is increasing from year to year. This is due to the fact that in some thin films of polymers there is a transition from a dielectric state into high-conductivity, which can be implemented by physical effects such as electric field, temperature, a small uniaxial pressure, etc. Light-sensitive polymer semiconductors through the combination photoconductor properties of thermal, mechanical and other specific properties of polymers have become indispensable in the creation of flexible photovoltaic elements for solar energy converters.

Innovative Aspect and Main Advantages

Developed and created a new type of heterostructures based on silicon and wideband polymers.

Areas of Application

Field-effect transistors, light-emitting diodes - LED, sensors and electrochemical transducers, polymer batteries, electroluminescent devices, Schottky diodes and organic transistors.


Fig. 1 (1) Ohmic contact;
(2) Polymer β-naftol;
(3) Silicon.

Stage of Development

The patent application documents are at a registration stage.

Contact Details

Institute of Physics NASA
Contact person: Gasanli Shamistan Mahmud oglu
Address: 33, H. Javid Avenue, AZ1143, Baku, Azerbaijan
Tel: (994 12) 439 3263
Fax: (994 12) 447 0456
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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