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Home Georgian Technologies Development of SiGe photovoltaic and optoelectronic devices

Development of SiGe photovoltaic and optoelectronic devices


The development of new technologies in radiation security and aerospace engineering requires an increase in the lifetime and stability of widerange infrared detectors.

In optimum modes, defined in the course of investigations during this project, experimental samples of the heteroepitaxial structures Si1-хGeх(x<0,03)/SiGe monocrystalline substrates Si-Ge:В were obtained.

Technological work on the creation of photovoltaic active elements on SiGe heterostructures was carried out; and their characteristics were determined.

In heteroepitaxial structures with a high concentration of electrical current carriers in upper layers, photovoltaic characteristics have been demonstrated to have an efficiency of solar energy transformation into electrical equal to 10 to 11%.

It has been demonstrated that a p-n junction fabricated on substrate Si+0,25at.%Ge:As (~1014cm-3), by implantation of B ions, is characterized by intensive photosensitivity maxima at 1.4 and 1.6 to 1.7μm. This shows possibilities for changing in near IR area critical wavelength values of photosensitivity maximum of p-n junctions on SiGe/p- Si-Ge structures.

An analysis of this research shows opportunities to increase the efficiency of photovolatics and the photosensitivity of IR detectors, based on Si- Ge alloys. By increasing Ge concentration in substrates up to 10 to 15at.% and in heterostructures up to 20 to 30at.% it is possible to develop highly efficient solar elements and photosensitive detectors for near and medium ranges of IR irradiation.

Based on these project results, a joint Georgian and Ukrainian team (Sokhumi Institute of Physics and Technology and Kharkiv Institute of Physics and Technology) are ready to produce highly efficient radiation hard solar radiation elements and sensitive IR photodetectors for 1.0 to 2.0μm wavelength areas, based on Si-Ge with low Ge content.

George Darsavelidze, Dr Guram Bokuchava, Lasha Tabatadze – Lead Scientists; Koba Komakhidze – Engineer

Contact Details

Darsavelidze George, Doctor of Science
Organization: I. Vekua Sukhumy Institute of Physics and Technology (SIPT)
Address: 11, Mindeli St, Tbilisi 0186, Georgia
(+995.32) 335520
This e-mail address is being protected from spambots. You need JavaScript enabled to view it

Shirokov Boris, Doctor of Science
Organization: National Science Center "Kharkiv Institute of Physics and Technology" (KIPT)
Address: 1, Academicheskaya St, Kharkiv 61108, Ukraine
(+380.057) 3353530
This e-mail address is being protected from spambots. You need JavaScript enabled to view it


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