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Home Georgian Technologies Increase Crop Yield of Leguminous Seed Grain with Metal-Organic Bacterial Fertilizer

Increase Crop Yield of Leguminous Seed Grain with Metal-Organic Bacterial Fertilizer


The fertilizer contains bacterial preparation Nitrogin, amphoteric organic polyion and metal ions such as Co2+, Ni2+, Cu2+, and MoO42- have created in Andronikashvili Institute of Physics. It is intended for incrustation of leguminous seed grain.

Treatment of the seed grain before seeding significantly increases:
1. Crop capacity of soybeans;
2. Number of pods;
3. The weight of the seeds;
4. Protein content in the seeds;
5. Reduction of the vegetation period by 10-15 days.

Our solution allows to:
1. Provide the process of nitrogen fixation with all necessary microelements excluding at this traditional application of the fertilizer directly to the soil and thus preventing pollution and decreasing amount of quite expensive microelements about 1000 times (i.e. decreasing the cost at the same rate);
2. Separate the opposite charged ions and by this preventing aggregation;
3. Create of sparing conditions for the bacteria and providing the smooth delivery of the ions to bacteria as they duplicate and function.

Innovative Aspect and Main Advantages

The main innovation of our product consists in addition of opposite charged ions simultaneously in the fertilizer. To achieve this, we have used amphoteric organic polyion.

Areas of Application

Agriculture, production of leguminous cultures.

The soy-plantation.
Fig. 1 The soy-plantation.

Stage of Development

The fertilizer was tested for four years starting from pilot experiments (first two years) to the machinery seeding on 0.4 hectare field (the consequent two years) on agricultural lands of the Institute of Soil Science, Agrochemistry and Melioration (in Phonichala, Sartichala) and the Research Institute of Agriculture (Tserovani) respectively.

The product and technology covered by patents of Georgia GE U 2006 1289 Y and GE U 2006 1290 Y.

Contact Details

Andronikashvili Institute of Physics
Contact person: Dr. Vasil G. Bregadze
Address: 6 Tamarashvili St. 0177 Tbilisi, Georgia
Phone(+995 32) 22 72 33
Fax: (+995 32) 39 14 94
E.mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it


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