Technologies available for licensing, investment, joint ventures and R&D contracts in Ukraine, Azerbaijan, Georgia, Moldova, Uzbekistan

Frontpage Slideshow (version 2.0.0) - Copyright © 2006-2008 by JoomlaWorks

Google Translate

Patenting Information

Tag Cloud

Free counters!

Home Georgian Technologies Ion-Implanted Semi-Conducting Detector of Thermal Neutrons

Ion-Implanted Semi-Conducting Detector of Thermal Neutrons


Compact neutron detector that effectively registers thermal neutrons flow has been main tool for environment protection, nuclear reactors safety and maintenance of international agreements on nonproliferation.

We plan to develop first pilot samples of portative ion-implanted semi-conducting detector of thermal neutrons (ISDTN) with p-n junction in which inversion layer of hole conductivity and neutron absorber 10B overlap. For the fist time detector is developed by doping n-type single-crystal silicon applying high-fluence implantation exclusively with ions of 10B nuclides. Neutrons registration using semi-conducting counter is conducted by detecting products of 10B nuclides fission due to helium and lithium particles which occur at neutron capture according to the scheme:

10B+n  → 4He (1471 keV)  +  7Li (839,0 keV)  +  γ (471 keV) - 93%

10B+n  →  4He (1777 keV)  +  7Li (1010 keV)  - 7%

The detector allows working in counting regime for the analyses of thermal neutrons, intense flow and in spectrometric regime for the analysis of decay products energy 10B distribution (spectrum) and in dosimetric regimes. Developed detectors are suitable for registration of cold and ultra-cold neutrons. Submitted detectors can be used as counting, spectrometric and dosimetric devices of electrons, protons, alpha and other heavy ions. Measurements are conducted at standard equipment.

Innovative Aspect and Main Advantages

Developed detectors ISDN are characterized by high values of: efficiency 10%, 3-30 sensitivity of intense flow of thermal neutrons, energy solving of detecting particles: helium and lithium.

At the current stage industrial applicability of the developed technology and technical competence of the detector is clearly seen. There exist detectors of thermal neutrons, which use semiconducting detectors (SCD) with independent neutron absorber. 10B or 6Li containing thin films of the substance are used as neutron absorber in converter for SCD. Usually the converter is placed between neutron source and SCD, or between two SDCs i.e. so called “sandwich”, otherwise it is combination of the two methods.

Core competence of the ISDTN by SIPT:

  • Electric physical, radiometric and metrological characteristics are 20-1000 higher than diffusion detectors with inversion layer combined with converter from 10B is two times higher than “sandwich” in regards of remote converter from 10B, comparable with surface-barrier detector with remote converter from 6Li, and according to spectroscopic and operational parameters outperforms.
  • Absence of remote converter for neutron absorbing and of insensitive (“dead” layer) towards device particle radiation in the detector construction expands reliability and simplifies its fabrication and exploitation.
  • Low efficiency of γ-radiation, provides detectors capacity at high dosage γ-radiation. Maintenance of standard application in semi-conducting microelectronics technology for manufacturing and assembling of the detectors.

Areas of Application

Modern detectors may find their applications in environment protection, nuclear reactors safety, nuclear reactors safety, medicine, geology, chemistry, biology and other fields of S&T. They can be applied for particular units of military parts and services of emergency situations.

Fig. 1 Samples ISDTN SIPT.

Energy spectre.
Fig. 2 Energy spectre.

Stage of Development

Laboratory tested.

Partnership with US organizations will be favourable including: joint development and creation of new modification ISDTN; joint enterprises establishment providing funds for US partner; ion-implantation centre in Tbilisi will serve foreign enterprises as well.

Contact Details

Yuri Nardaya
Organization: Sukhumi Institute of Physics and Technology (SIPT)
Address: 15 Kazbegi Avenue 0160 Tbilisi, Georgia
(+995 32) 33 5520
This e-mail address is being protected from spambots. You need JavaScript enabled to view it


0 #1 fitness classes 2014-08-05 10:26
I'm not sure why but this site is loading extremely slow for me.
Is anyone else having this problem or is it a problem on my end?
I'll check back later and see if the problem still exists.

Add comment

Security code