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Home Georgian Technologies Control of Wide Band Gap Semiconductor Properties by Radical Beam Quasiepitaxy Method

Control of Wide Band Gap Semiconductor Properties by Radical Beam Quasiepitaxy Method


The radical beam quasiepitaxy method (RBQE) enables us to grow quasi-epitaxial layers of ZnO on the surface of binary compound such as ZnO, ZnS, ZnSe, ZnTe. During the formation of new layers under RBQE the non-metal component comes from the gaseous phase and the metal-component from the basic crystal. Also, basic crystal is placed in the area of maximal temperature of the reactor. With regulation of temperature (300 to 1500 K) we can control of diffusion speed of A component. In role of non-metal component we use singlet radicals of oxygen with concentration N=1014-1015cm-3. This causes controlling the relationship of A and B components and consequently - electro-optical properties of obtained layers. Thus, the RBQE method enables to control the electrical and optical properties of basic crystal as well as the grown layers.

Innovative Aspect and Main Advantages

The RBQE method was specifically designed for resolving of electro-optical properties regulation problems in wide gap semiconductors. The RBQE method doesn’t substitute other epitaxial methods - MBE or MOVPE. The substrate used under RBQE is semiconductor crystal optoelectronic properties of which can be regulated. Therefore, first semiconductor sample will be obtained by an established method and the RBQE will be used for effectively control of their optoelectronic properties. Application of the materials and structures obtained by the RBQE technology will increase their resistance to degradation of structures, resistance to temperature, radiation and other outer impacts. Obtaining of optoelectronic application and devices for information communication will increase speed and quality of communication system.

Under RBQE size of substrate varies 1 - 4cm2. The speed of growth is ~ 10 μm/hours. The thickness of obtained layers varies from few atomic layers to 50 μm.

Areas of Application

By means of the RBQE technological method it is possible to obtain semiconductor materials working in extreme conditions. By RBQE it is possible to obtain the unique applications: ZnMnTeO highest (57%) efficiency solar bataries; p-n junction ZnO/ZnO structures for computer chips, UV diodes, UV lasers and other optoelectronic devices and controlling system of communication. The concept implemented in RBQE method exceeds the boundaries of one semiconductor, the range of its future application will cover all compounds with two components like: ZnS, ZnO, ZnSe, GaN, Al2O3, etc. (one metal, another non-metal).

Fig. 1 I –V characteristic of p-type ZnO structures
obtained by RBQE method.

Fig. 2 The photo of ZnO layers growing.

Stage of Development

By RBQE method there were obtained p-type layers of ZnO on the basic of ZnO samples. Hall effect measurements results showed following characteristics carrier mobility, carrier concentration and resistance: 230 ÷250 cm2/ Vs, 7 ÷ 8 × 1018cm-3 and 3.9 ÷ 3.1 × 10-3Ωcm, respectively. We intend to apply for an international patent for this technological method.

Contact Details

Maia Sharvashidze
Organization: Tbilisi State University, Department of Exact and Natural Sciences
Address: 3, Chavchavadze ave. 0128, Tbilisi, Georgia
(+995 32) 74 6603
This e-mail address is being protected from spambots. You need JavaScript enabled to view it , This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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