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Home Material Sciences Technology of interference nanolithography

Technology of interference nanolithography with the use of high-resolution chalcogenide photoresist

Description

Institute of Physics of Semiconductor of NASU developing interference nanolithography (including immersion) which are based on vacuum deposited chalcogenide photoresists. These photoresists are characterized by high resolution, wide spectral range of light sensitivity and the possibility of deposition onto substrates with complex shape. Chalcogenide photoresists may be deposited in one cycle with the functional layers in microelectronic manufacturing. Besides it these photoresists have a high refractive index (from 2.3 to 3.0 and even higher in the ultraviolet region of the spectrum), they are thermally and chemically stable. The combination of interference lithography with original vacuum photoresist allowed to develop effective technology of forming of periodic nanostructures with spatial frequencies up to 8000 mm1 (minimum size of elements less than 100 nm), including diffraction gratings, elements of input-output of radiation, polarizers, filters, sensory structures, electron emission structures and so on.

Innovative Aspect and Main Advantages

In this technology we can used germanium chalcogenides more environmentally acceptable compounds than traditionally used arsenic chalcogenides. Price of gratings and others structures, developed by V.E. Lashkaryov Institute of Semiconductor Physics, will be 1.52 times lower than the price of leading Western firms analogues with the same characteristics.

Areas of Application

hologram gratings will be used as dispersing elements in different spectroscopic instruments intended for medical and biological research and analysis (especially in the diagnosis of infectious diseases in the early stages), spectral analysis in industry, environmental analyzes etc. Sensors which are based on grating IO will be used in industrial, medical and biological research, to solving of problems associated with environmental protection, for the analysis of food and beverages.



Pictures of the diffraction gratings and others optical elements on the basis of chalcogenide resists

Contact Details

Ivan Indutnyy
Organization: V. Lashkaryov Institute of Semiconductors Physics of NASU
Adress: 41 Prospect Nauki, 03028, Kiev, Ukraine
(+380 44) 525-6342
This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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