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Home Material Sciences Ga, In and Pb Deep Purification Unit

Ga, In and Pb Deep Purification Unit


Ga, In and Pb deep purification unit


  • Purification of Ga, In and Pb;
  • equipment supply, installation and adjustment;
  • personnel training.


Using the source Ga, In and Pb technically-pure (99.9…99.99 %) elements, the high-capacity unit allows to produce high-yield end products with their purity being higher than 99.9999 %.

Operation of the Ga, In and Pb deep purification unit is based on the principle of material vacuum distillation refining. The unit provides for simultaneous removal of low-volatility impurities by the method of base metal evaporation from the crucible and removal of high-volatility impurities by the method of holding condensate under high-temperature conditions in the process of purification, which ensures a deeper purification of gallium, indium and lead to remove metal impurities and a higher efficiency of the refining process.

Unit specifications

  • Mass of original material charge                    : 2.3 kg
  • Unit capacity                                               : 300…400 g/hour
  • Product yield percent                                   : 90 % of original charge
  • Dimensions of unit, including heater and shields:
    • height             – 350 mm;
    • diameter         – 200 mm;
    • weight            – 4 kg
  • Crucible and condenser material : graphite of grade МПГ-7;
  • heater and shields material :      graphite of grade МГ-1 ОСЧ 7-3, ТУ 48-20-9082
  • Operating temperature : 950…13500С
  • Crucible and condenser temperature control : thermocouples ВР-5/20
  • Vacuum under cold and hot conditions : 1.33 ·10-3 Pa
  • The unit is based on standard furnace units of type СЗВН-0,55.4,5/14-И1.

Main Advantages

  • High effectiveness of purification (from 99.9…99.99 % to > 99.9999 %);
  • higher yield of end product (90 % of original charge);
  • high capacity (300…400 г/час).

Areas of Application

Production of Ga, In and Pb having purity higher than 99.9999 % for synthesis of semiconducting compounds and generation of heterostructures to be applied in the fields of:

  • microelectronics : integrated circuits (GaAs);
  • optoelectronics : scintillation sensors PbWO4, PbMoO4 for identification of double β - decay and dark matter particles;
  • microwave electronics materials (GaAs, GaN, InP, InAs, InSb, GaAlAs/GaAs, AlGaN/GaN, InGaAs/InP, etc.).

Stage of Development

  • Pilot production plant;
  • process instructions.

Contact Details

National Science Center “Kharkov Institute of Physics and Technology”
«TIDIS» - Department of technology transfer, innovation activity and intellectual property
Address: 1, Akademicheskaya Str., Kharkov 61108,Ukraine
Contact: Pugach Sergii Grygorovych
Tel/fax: +38 (057) 335-18-89
e-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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