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Home Material Sciences Novel semiconductor materials on the basis of FeSe, FeTe: technology of synthesis and growth, properties and possible applications

Novel semiconductor materials on the basis of FeSe, FeTe: technology of synthesis and growth, properties and possible applications

Description

At the beginning of 1987 the whole scientific world was occupied by search of non-traditional investigations of the well-known already explored superconductors. Critical temperature ТС, i.e. that of transition to superconductive state, have been growing fast. Namely, for the La-Sr-Cu-O alloy it equals 45 К, for synthesized La-Ba-Cu-O it is 63 К. In 1987 the temperature of 93 К was achieved in YBa2Cu3O7 compound, while in Ba-Ca-Cr-Cu-O it amounted to 110 К.

Using mercury and thallium alloys, critical temperature was increased up to 135 К. At the moment a problem of critical temperature increase became extremely urgent. For the last 20 years a lot of novel theories have aroused, tens or even hundred thousands of new materials have been studied, while temperature scale of transition to superconducting state left unchanged. At the end of 2008 researchers from Japan and China developed new family of high-temperature semiconductors of LaOFeAs, as well as those on the basis of FeSe, FeTe and some alloys of FeTeSe, pointing out these compounds to be promising, considering their practical application, and from the point of view of understanding the physical phenomena, typical of semiconductors on the basis of iron.

We propose:

  • development of the techniques of focused synthesis and growth of single crystals on the basis of FeSe, FeTe with various component content, and presence of 3d and 4f- impurities (FeSeTe, FeSeHgTe, GdFeSeTe, CrFeSeTe);
  • investigation of their electrical, galvanomagnetic, magnetic properties and establishment of temperature of transition to superconducting state in the materials with different compositional content;
  • analysis of the obtained results in order to find materials, appropriate for optoelectronics and spintronics device fabrication.

Innovative Aspect and Main Advantages

The materials proposed appear to be partially or even not investigated considering their transition to superconducting state, and in the first place, determining temperature of transition TС. While choosing as basic materials of FeSe, FeTe with different content of other elements with unfilled 3dand 4f- shells we suppose, that progress of technological techniques on one hand, and presence of 3d- or 4f-impurities in the crystalline lattice, on the other will be favorable for elevation of temperature of transition to superconducting state.

Areas of Application

In case of achievement of “high” temperature of transition to superconducting state the scope of branches of possible application is rather wide, among which are cellular connection, energetics, microelectonics, spintronics.

semiconductor materials on the basis of FeSe, FeTe
Fig. 1 Semiconductor materials on the basis of FeSe, FeTe

Stage of Development

The laboratory technique of synthesis has been developed and crystalline growth by Bridgman method has been verified. The investigations of electrical, galvano-magnetic and thermal-electrics properties of the FeSe0,82 crystals have been carried out.

Contact Details

2, Kotsyubynskoho str., 58012 Chernivtsi, Ukraine
Paranchych Stepan
Tel. (0372)584753
Home (0372)556282
Fax (0372)542914
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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