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Home Moldova Technologies Development of Silicon PV Modules by Spray Pirolysis

Development of Silicon PV Modules by Spray Pirolysis

Description

The spray technology of obtaining transparent conductive layers (TCO) and of producing a laboratory installation for their fabrication has been developed. (Fig.1)

The ITO/nSi solar cells with the surface area of 50cm and the efficiency of over 10% have been made. The panels on the base of those solar cells have been assembled with the power up to 36W (Fig.2).

Fig.1. General image of the installation
for ITO thin films deposition.

Fig.2. General view of ITO/nSi
solar panels.

Using the spray method, bifacial ITO/ nSi/n+Si solar cells (BSC) have been made. The BSC contain Back surface field (BSF) that increase efficiency of these cells.

Innovative Aspect and Main Advantages

- the spray technology is simpler and cheaper, expensive equipment and highly qualified personnel are not required
- power inputs are low due to low temperature of the proposed technology, i.e. 450 C in comparison with the traditional technology temperature of 1200 C
- the proposed technology is less polluting
- waste of Si from the electronic industry can be
- used.


Fig. 3 The I-V load characteristics at AM1.5 spectral distribution
and 1000W/m2 illumination.
1 - frontal illumination; 2 - rear illumination

Areas of Application

Prototype available for testing; Tested, available for demonstration. The spraying methods of monofacial and bifacial SC preparation are protected by:
- Moldavian Patents: MD 2245, 3737
- SU Patent: Method of photovoltaic cell preparation N1533590

Stage of Development

Solar energetics:Stationary concentrating PV system.

Contact Details

Institute of Applied Physics, Academy of Sciences of Moldova
Address: Academia str.5, MD 2028, Chisinau, Rep. of Moldova
Contact person: acad. Alexei Simashkevich
Tel. (+37322) 738054
Fax (+37322) 738149
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it , This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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