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Home Sensors Material for uncooled microbolometers

Material for uncooled microbolometers


Uncooled infrared microbolometer detectors have recently gained wide attention for infrared imaging applications, due to their advantages such as low cost, low weight, low power, large spectral response, and long term operation. The sensitive element of a microbolometer usually contains a thermosensitive layer with high value of temperature coefficient of resistance (TCR) and absorbing coating. However presence of additional layers essentially complicates manufacturing techniques, increases a thermal capacity of microbolometer and worsens its characteristics.

To solve this problem we have developed composite metal-dielectric films deposited in vacuum. Such films are characterized by high selective absorption (up to 85%) in IR - spectral area (8 – 12 mkm) which is combined with acceptable values of TCR. Varying the contents of metal in metal-dielectric film it is possible to change its resistivity in very wide limits: from characteristic for dielectric-oxide up to metal, and obtain TCR at room temperature up to 2-3%K-1.

The purpose of the offered project consists in creation of microbolometer thermosensitive element (pixel) on the basis of metal - dielectric films. Microbolometer pixel is formed with use of CMOS technology as a membrane of silicon nitride on which the sensitive layer and contacts are located.

Innovative Aspect and Main Advantages

Offered thermosensitive layers have the following advantages:

  • high stability of physical and chemical properties,
  • absence of toxic components,
  • compatibility with IC fabrication technology,
  • low commercial cost.

It allows to realize on one layer absorption of IR - radiation and formation of an electric signal.

Areas of Application

Production of uncooled infrared microbolometer detectors

Fig. 1 Temperature dependence of resistivity and TCR of composite film

Stage of Development

Technology is patented, prototype samples of thin-film bolometers are made and tested.

Bring the development up to industry (manufacture of array or matrix microbolometer detectors) is possible in cooperation with firm-manufacturer of uncooled thermovision systems or with firm in which CMOS technology is used.

Contact Details

V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
Ivan Indutnyy, Prof., Head of department
Prosp. Nauki, 45, Kyiv, 03028, Ukraine
Tel/Fax: 5256342
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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