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Home Sensors Creation Sensory Diodes Structures on the Basis of Crystals CdTe for Devices of Detecting X-Ray and G-Ray Radiations

Creation Sensory Diodes Structures on the Basis of Crystals CdTe for Devices of Detecting X-Ray and G-Ray Radiations

Description

The technology of fabrication of diode structures is in the formation of a p-n junction in a surface layer of high resistivity CdTe crystal by the method of laser-induced doping and vacuum deposition of electrodes.

Schematic illustgration of the procedures of
laser-induced doping and formation of an
In/CdTe/Au diode structure

Innovative Aspect and Main Advantages

Patent UA №41216, 2009.

Areas of Application

The base sectors of the economy (nuclear power, industry, ecology, transport, medicine, etc.) for detection of radioisotope polluted territories, materials and subjects, in particular, for the prevention of illegal trafficking of radioactive materials, evaluation of the contamination level of mineral, soil and water, and also to control the quality of industry products, to check luggage and cargoes on transport, diagnostics in medicine, to visualize objects in space, etc.

Samples of the In/CdTe/Au detectors

Samples of the In/CdTe/Au detectors
Samples of the In/CdTe/Au detectors

Stage of Development

Pilot samples.

Contact Details

V. Lashkaryov Institute of Semiconductors Physics of the National Academy of Sciences of Ukraine
Contact person: Vlasenko. A.I.
Address: 41, Prospect Nauki, 03028, Kiev, Ukraine
Tel./Fax: (+38 044) 525 1260
E-mail: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

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